SIS782DN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

30.5 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1025 pF @ 15 V

FET Feature

Schottky Diode (Body)

FET Type

N-Channel

Power Dissipation (Max)

41W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-50°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIS782