SIS890ADN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

29 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1330 pF @ 50 V

Power Dissipation (Max)

3.6W (Ta), 39W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta), 24.7A (Tc)

Rds On (Max) @ Id, Vgs

25.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIS890