Component information
SISA88DN-T1-GE3
Vishay Siliconix SISA88DN-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® 1212-8. Supplier Device Package: PowerPAK® 1212-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 25.5 nC @ 10 V
- Vgs (Max)
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds
- 985 pF @ 15 V
- Power Dissipation (Max)
- 3.2W (Ta), 19.8W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30 V
- Current - Continuous Drain (Id) @ 25°C
- 16.2A (Ta), 40.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 6.7mOhm @ 10A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® 1212-8
- Package / Case
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SISA88
Documentation and references
Documentation can be discussed with your inquiry.
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