Component information
SISF00DN-T1-GE3
Vishay Siliconix SISF00DN-T1-GE3: FET, MOSFET Arrays. Package / Case: PowerPAK® 1212-8SCD Dual. Supplier Device Package: PowerPAK® 1212-8SCD Dual.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2700pF @ 15V
- Power - Max
- 69.4W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 N-Channel (Dual) Common Drain
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 10A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8SCD Dual
- Supplier Device Package
- PowerPAK® 1212-8SCD Dual
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SISF00
Documentation and references
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