Component information
SISF02DN-T1-GE3
Vishay Siliconix SISF02DN-T1-GE3: FET, MOSFET Arrays. Package / Case: PowerPAK® 1212-8SCD. Supplier Device Package: PowerPAK® 1212-8SCD.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2650pF @ 10V
- Power - Max
- 5.2W (Ta), 69.4W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 N-Channel (Dual) Common Drain
- Drain to Source Voltage (Vdss)
- 25V
- Current - Continuous Drain (Id) @ 25°C
- 30.5A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs
- 3.5mOhm @ 7A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8SCD
- Supplier Device Package
- PowerPAK® 1212-8SCD
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SISF02
Documentation and references
Documentation can be discussed with your inquiry.
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