SISF06DN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 15V

Power - Max

5.2W (Ta), 69.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Common Drain

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 101A (Tc)

Rds On (Max) @ Id, Vgs

4.5mOhm @ 7A, 10V

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8SCD

Supplier Device Package

PowerPAK® 1212-8SCD

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SISF06