SISF12EDN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

3.6mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

5950pF @ 6V

Power - Max

5.2W (Ta), 69.4W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 109A (Tc)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8SCD

Supplier Device Package

PowerPAK® 1212-8SCD

Packaging

Tape & Reel (TR); Cut Tape (CT)