SISH407DN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93.8 nC @ 8 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2760 pF @ 10 V

Power Dissipation (Max)

3.6W (Ta), 33W (Tc)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

15.4A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 15.3A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8SH

Package / Case

PowerPAK® 1212-8SH

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SISH407