SISS06DN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

77 nC @ 10 V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3660 pF @ 15 V

Power Dissipation (Max)

5W (Ta), 65.7W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

47.6A (Ta), 172.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.38mOhm @ 15A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SISS06