SISS4409DN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

126 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5670 pF @ 20 V

FET Type

P-Channel

Power Dissipation (Max)

4.8W (Ta), 56.8W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

17.2A (Ta), 59.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S

Packaging

Tape & Reel (TR); Cut Tape (CT)