SIZ250DT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 30V, 790pF @ 30V

Power - Max

4.3W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 38A (Tc)

Rds On (Max) @ Id, Vgs

12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (3.3x3.3)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIZ250