SIZ256DT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 35V

Power - Max

4.3W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

70V

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta), 31.8A (Tc)

Rds On (Max) @ Id, Vgs

17.6mOhm @ 7A, 4.5V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (3.3x3.3)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIZ256