Component information
SIZ260DT-T1-GE3
Vishay Siliconix SIZ260DT-T1-GE3: FET, MOSFET Arrays. Package / Case: 8-PowerWDFN. Supplier Device Package: 8-PowerPair® (3.3x3.3).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 820pF @ 40V
- Power - Max
- 4.3W (Ta), 33W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 80V
- Current - Continuous Drain (Id) @ 25°C
- 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
- Rds On (Max) @ Id, Vgs
- 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Supplier Device Package
- 8-PowerPair® (3.3x3.3)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIZ260
Documentation and references
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