SIZ342BDT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

9.65mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 15V

Power - Max

3.7W (Ta), 16.7W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel, Common Source (Half Bridge)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15.4A (Ta), 32.9A (Tc)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-Power33 (3x3)

Packaging

Tape & Reel (TR); Cut Tape (CT)