Component information
SIZ918DT-T1-GE3
Vishay Siliconix SIZ918DT-T1-GE3: FET, MOSFET Arrays. Package / Case: 8-PowerWDFN. Supplier Device Package: 8-PowerPair® (6x5).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 790pF @ 15V
- Power - Max
- 29W, 100W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Half Bridge)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 16A, 28A
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Supplier Device Package
- 8-PowerPair® (6x5)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIZ918
Documentation and references
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