SIZF360DT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Last Time Buy

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V, 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V, 3150pF @ 15V

Power - Max

3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual), Schottky

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

Rds On (Max) @ Id, Vgs

4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Mounting Type

Surface Mount

Package / Case

6-PowerPair™

Supplier Device Package

6-PowerPair™

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIZF360