SIZF5302DT-T1-UE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

3.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 15V

Power - Max

3.8W (Ta), 48.1W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C

Configuration

2 N-Channel

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28.1A (Ta), 100A (Tc)

Mounting Type

Surface Mount

Package / Case

12-PowerPair™

Supplier Device Package

PowerPAIR® 3 x 3FS

Packaging

Tape & Reel (TR); Cut Tape (CT)