SIZF640DT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

5750pF @ 20V

Power - Max

4.2W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

41A (Ta), 159A (Tc)

Rds On (Max) @ Id, Vgs

1.37mOhm @ 15A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerDFN

Supplier Device Package

PowerPAIR® 6x5FS

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIZF640