Component information
SIZF916DT-T1-GE3
Vishay Siliconix SIZF916DT-T1-GE3: FET, MOSFET Arrays. Package / Case: 8-PowerWDFN. Supplier Device Package: 8-PowerPair® (6x5).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V, 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1060pF @ 15V, 4320pF @ 15V
- Power - Max
- 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 23A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs
- 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Supplier Device Package
- 8-PowerPair® (6x5)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIZF916
Documentation and references
Documentation can be discussed with your inquiry.
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