SIZF918DT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

2.4V @ 250µA, 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V, 56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 15V, 2650pF @ 15V

Power - Max

3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual), Schottky

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)

Rds On (Max) @ Id, Vgs

4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (6x5)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIZF918