Component information
SMMBTA13LT1
SMMBTA13LT1 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10000 @ 100mA, 5V
- Packaging
- Bulk
- Power - Max
- 225 mW
- Part Status
- Active
- Frequency - Transition
- 125MHz
- Transistor Type
- NPN - Darlington
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 300 mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 100µA, 100mA
- Supplier Device Package
- SOT-23-3 (TO-236)
Documentation and references
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