Component information
SPB17N80C3ATMA1
SPB17N80C3ATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.9V @ 1mA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 177 nC @ 10 V
- Series
- CoolMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 2300 pF @ 100 V
- Part Status
- Not For New Designs
- Power Dissipation (Max)
- 227W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 800 V
- Supplier Device Package
- PG-TO263-3-2
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- SPB17N80
- Rds On (Max) @ Id, Vgs
- 290mOhm @ 11A, 10V
Documentation and references
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