Component information
SPB80N06S08ATMA1
SPB80N06S08ATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 187 nC @ 10 V
- Mfr
- Infineon Technologies
- Vgs (Max)
- ±20V
- Series
- SIPMOS®
- Input Capacitance (Ciss) (Max) @ Vds
- 3660 pF @ 25 V
- Packaging
- Tape & Reel (TR)
- Power Dissipation (Max)
- 300W (Tc)
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 55 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Supplier Device Package
- PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs
- 7.7mOhm @ 80A, 10V
- Base Product Number
- SPB80N
- Vgs(th) (Max) @ Id
- 4V @ 240µA
Documentation and references
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