Component information
SPD04N60C3
SPD04N60C3 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.9V @ 200µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 25 nC @ 10 V
- Series
- CoolMOS™
- Vgs (Max)
- ±20V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 490 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 50W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 600 V
- Supplier Device Package
- PG-TO252-3
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- SPD04N
- Rds On (Max) @ Id, Vgs
- 950mOhm @ 2.8A, 10V
Documentation and references
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