Component information
SPD18P06P
SPD18P06P component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 33 nC @ 10 V
- Series
- SIPMOS®
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 860 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 80W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 60 V
- Supplier Device Package
- PG-TO252-3
- Current - Continuous Drain (Id) @ 25°C
- 18.6A (Tc)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- SPD18P
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 13.2A, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ