SPP11N80C3XKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolMOS™

Part Status

Not For New Designs

Vgs(th) (Max) @ Id

3.9V @ 680µA

Gate Charge (Qg) (Max) @ Vgs

85 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600 pF @ 100 V

Power Dissipation (Max)

156W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 7.1A, 10V

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Packaging

Tube

Base Product Number

SPP11N80