Component information
SQ3460EV-T1_GE3
SQ3460EV-T1_GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 14 nC @ 4.5 V
- Mfr
- Vishay Siliconix
- Vgs (Max)
- ±8V
- Series
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds
- 1060 pF @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power Dissipation (Max)
- 3.6W (Tc)
- Part Status
- Active
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Supplier Device Package
- 6-TSOP
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 5.1A, 4.5V
- Base Product Number
- SQ3460
- Vgs(th) (Max) @ Id
- 1V @ 250µA
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ