Component information

SQ4401EY-T1_GE3

SQ4401EY-T1_GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Mfr
Vishay Siliconix
Vgs (Max)
±20V
Series
TrenchFET®
Input Capacitance (Ciss) (Max) @ Vds
4250 pF @ 20 V
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power Dissipation (Max)
7.14W (Tc)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
P-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
40 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
17.3A (Tc)
Supplier Device Package
8-SOIC
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs
14mOhm @ 10.5A, 10V
Base Product Number
SQ4401
Vgs(th) (Max) @ Id
2.5V @ 250µA

Documentation and references

Reference document ↗

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