Component information

SQJ403BEEP-T1_GE3

SQJ403BEEP-T1_GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
164 nC @ 10 V
Series
TrenchFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Power Dissipation (Max)
68W (Tc)
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
P-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
30 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Supplier Device Package
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs
8.5mOhm @ 10A, 10V
Base Product Number
SQJ403

Documentation and references

Reference document ↗

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