Component information

SSM3J327R,LF

SSM3J327R,LF component information and product attributes.

Product information

Manufacturer
Toshiba Semiconductor and Storage
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1V @ 1mA
Mfr
Toshiba Semiconductor and Storage
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V
Series
U-MOSVI
Vgs (Max)
±8V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 10 V
Part Status
Active
Power Dissipation (Max)
1W (Ta)
FET Type
P-Channel
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
20 V
Supplier Device Package
SOT-23F
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Package / Case
SOT-23-3 Flat Leads
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Base Product Number
SSM3J327
Rds On (Max) @ Id, Vgs
93mOhm @ 1.5A, 4.5V

Documentation and references

Reference document ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number