Component information
SSM6N57NU,LF
SSM6N57NU,LF component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Manufacturer
- Toshiba Semiconductor and Storage
- Gate Charge (Qg) (Max) @ Vgs
- 4nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 310pF @ 10V
- Part Status
- Active
- Power - Max
- 1W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30V
- Package / Case
- 6-WDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Supplier Device Package
- 6-µDFN (2x2)
- Rds On (Max) @ Id, Vgs
- 46mOhm @ 2A, 4.5V
- Base Product Number
- SSM6N57
Documentation and references
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