Component information

SSN1N45BTA

SSN1N45BTA component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
3.7V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V
Packaging
Cut Tape (CT); Tape & Box (TB)
Vgs (Max)
±50V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
900mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
450 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Supplier Device Package
TO-92-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Rds On (Max) @ Id, Vgs
4.25Ohm @ 250mA, 10V
Base Product Number
SSN1N45

Documentation and references

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