STB11NM80T4

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Series

MDmesh™

Part Status

Active

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43.6 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1630 pF @ 25 V

Power Dissipation (Max)

150W (Tc)

FET Type

N-Channel

Operating Temperature

-65°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 5.5A, 10V

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

STB11