STB37N60DM2AG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Series

MDmesh™ DM2

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2400 pF @ 100 V

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

FET Type

N-Channel

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

STB37