Component information
STB46N60M6
STB46N60M6 component information and product attributes.
Product information
- Manufacturer
- STMicroelectronics
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 53.5 nC @ 10 V
- Mfr
- STMicroelectronics
- Vgs (Max)
- ±25V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 2340 pF @ 100 V
- Part Status
- Active
- Power Dissipation (Max)
- 250W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 600 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 36A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Supplier Device Package
- TO-263 (D2PAK)
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 18A, 10V
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.75V @ 250µA
- Base Product Number
- STB46
Documentation and references
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