Component information
STGB10M65DF2
STGB10M65DF2 component information and product attributes.
Product information
- Manufacturer
- STMicroelectronics
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Input Type
- Standard
- Manufacturer
- STMicroelectronics
- Gate Charge
- 28 nC
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Td (on/off) @ 25°C
- 19ns/91ns
- Part Status
- Active
- Test Condition
- 400V, 10A, 22Ohm, 15V
- IGBT Type
- Trench Field Stop
- Reverse Recovery Time (trr)
- 96 ns
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Current - Collector (Ic) (Max)
- 20 A
- Mounting Type
- Surface Mount
- Current - Collector Pulsed (Icm)
- 40 A
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vce(on) (Max) @ Vge, Ic
- 2V @ 15V, 10A
- Supplier Device Package
- TO-263 (D2PAK)
- Power - Max
- 115 W
- Base Product Number
- STGB10
- Switching Energy
- 120µJ (on), 270µJ (off)
Documentation and references
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