Component information
STGB20NB32LZ
STGB20NB32LZ component information and product attributes.
Product information
- Manufacturer
- STMicroelectronics
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 11.8mJ (off)
- Manufacturer
- STMicroelectronics
- Input Type
- Standard
- Series
- PowerMESH™
- Gate Charge
- 51 nC
- Packaging
- Tube
- Td (on/off) @ 25°C
- 2.3µs/11.5µs
- Part Status
- Obsolete
- Test Condition
- 250V, 20A, 1kOhm, 4.5V
- Voltage - Collector Emitter Breakdown (Max)
- 375 V
- Operating Temperature
- 175°C (TJ)
- Current - Collector (Ic) (Max)
- 40 A
- Mounting Type
- Surface Mount
- Current - Collector Pulsed (Icm)
- 80 A
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vce(on) (Max) @ Vge, Ic
- 2V @ 4.5V, 20A
- Supplier Device Package
- D2PAK
- Power - Max
- 150 W
- Base Product Number
- STGB20
Documentation and references
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