Component information
STGW75H65DFB2-4
STGW75H65DFB2-4 component information and product attributes.
Product information
- Manufacturer
- STMicroelectronics
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 992µJ (on), 766µJ (off)
- Manufacturer
- STMicroelectronics
- Input Type
- Standard
- Series
- HB2
- Gate Charge
- 207 nC
- Packaging
- Tube
- Td (on/off) @ 25°C
- 22ns/121ns
- Part Status
- Active
- Test Condition
- 400V, 75A, 10Ohm, 15V
- IGBT Type
- Trench Field Stop
- Reverse Recovery Time (trr)
- 88 ns
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Current - Collector (Ic) (Max)
- 115 A
- Mounting Type
- Through Hole
- Current - Collector Pulsed (Icm)
- 225 A
- Package / Case
- TO-247-4
- Vce(on) (Max) @ Vge, Ic
- 2V @ 15V, 75A
- Supplier Device Package
- TO-247-4
- Power - Max
- 357 W
- Base Product Number
- STGW75
Documentation and references
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