Component information

STH275N8F7-2AG

STMicroelectronics STH275N8F7-2AG: Single FETs, MOSFETs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: H2PAK-2.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
STMicroelectronics
Series
STripFET™ F7
Part Status
Active
Gate Charge (Qg) (Max) @ Vgs
193 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13600 pF @ 50 V
Power Dissipation (Max)
315W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
STH275

Documentation and references

Manufacturer datasheet ↗

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