STP65N045M9

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Part Status

Active

Vgs(th) (Max) @ Id

4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4610 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

245W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 28A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Packaging

Tube

Base Product Number

STP65N