Component information
TK2P60D(TE16L1,NQ)
TK2P60D(TE16L1,NQ) component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4.4V @ 1mA
- Mfr
- Toshiba Semiconductor and Storage
- Gate Charge (Qg) (Max) @ Vgs
- 7 nC @ 10 V
- Series
- π-MOSVII
- Vgs (Max)
- ±30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 280 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 60W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 600 V
- Supplier Device Package
- PW-MOLD
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- TK2P60
- Rds On (Max) @ Id, Vgs
- 4.3Ohm @ 1A, 10V
Documentation and references
Documentation can be discussed with your inquiry.
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