Component information
TK3P80E,RQ
TK3P80E,RQ component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 300µA
- Mfr
- Toshiba Semiconductor and Storage
- Gate Charge (Qg) (Max) @ Vgs
- 12 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±30V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 500 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 80W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C
- Drain to Source Voltage (Vdss)
- 800 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- Supplier Device Package
- DPAK
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs
- 4.9Ohm @ 1.5A, 10V
Documentation and references
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