Component information
TK4A60D(STA4,Q,M)
TK4A60D(STA4,Q,M) component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4.4V @ 1mA
- Mfr
- Toshiba Semiconductor and Storage
- Gate Charge (Qg) (Max) @ Vgs
- 12 nC @ 10 V
- Series
- π-MOSVII
- Vgs (Max)
- ±30V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 600 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 35W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 600 V
- Supplier Device Package
- TO-220SIS
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Package / Case
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- TK4A60
- Rds On (Max) @ Id, Vgs
- 1.7Ohm @ 2A, 10V
Documentation and references
Documentation can be discussed with your inquiry.
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