Component information
TN0110N3-G
TN0110N3-G component information and product attributes.
Product information
- Manufacturer
- Microchip Technology
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 500µA
- Mfr
- Microchip Technology
- Vgs (Max)
- ±20V
- Packaging
- Bag
- Input Capacitance (Ciss) (Max) @ Vds
- 60 pF @ 25 V
- Part Status
- Active
- Power Dissipation (Max)
- 1W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 100 V
- Supplier Device Package
- TO-92-3
- Current - Continuous Drain (Id) @ 25°C
- 350mA (Tj)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- TN0110
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 500mA, 10V
Documentation and references
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