Component information
TN5335K1-G
Microchip Technology TN5335K1-G: Single FETs, MOSFETs. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT-23-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Microchip Technology
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 110 pF @ 25 V
- Power Dissipation (Max)
- 360mW (Ta)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 350 V
- Current - Continuous Drain (Id) @ 25°C
- 110mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 3V, 10V
- Rds On (Max) @ Id, Vgs
- 15Ohm @ 200mA, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- SOT-23-3
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- TN5335
Documentation and references
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