Component information
TP65H015G5WS
Renesas Electronics Corporation TP65H015G5WS: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: TO-247-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Renesas Electronics Corporation
- Series
- SuperGaN™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id
- 4.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs
- 100 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 5218 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 266W (Tc)
- Technology
- GaNFET (Gallium Nitride)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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