Component information
TP65H035G4WS
Renesas Electronics Corporation TP65H035G4WS: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: TO-247-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Renesas Electronics Corporation
- Series
- SuperGaN™
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 22 nC @ 0 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1500 pF @ 400 V
- Power Dissipation (Max)
- 156W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C
- Technology
- GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 30A, 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3
- Packaging
- Tube
- Base Product Number
- TP65H035
Documentation and references
Documentation can be discussed with your inquiry.
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