Component information
TP65H100G4PS
Renesas Electronics Corporation TP65H100G4PS: Single FETs, MOSFETs. Package / Case: TO-220-3. Supplier Device Package: TO-220AB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Renesas Electronics Corporation
- Series
- SuperGaN®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id
- 4.1V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs
- 14.4 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 818 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 65.8W (Tc)
- Technology
- GaNFET (Gallium Nitride)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 18.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
- TO-220-3
- Packaging
- Tube
Documentation and references
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