Component information
TPN3R704PL,L1Q
TPN3R704PL,L1Q component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.4V @ 200µA
- Mfr
- Toshiba Semiconductor and Storage
- Gate Charge (Qg) (Max) @ Vgs
- 27 nC @ 10 V
- Series
- U-MOSIX-H
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 2500 pF @ 20 V
- Part Status
- Active
- Power Dissipation (Max)
- 630mW (Ta), 86W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- 175°C
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 40 V
- Supplier Device Package
- 8-TSON Advance (3.1x3.1)
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Package / Case
- 8-PowerVDFN
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- TPN3R704
- Rds On (Max) @ Id, Vgs
- 3.7mOhm @ 40A, 10V
Documentation and references
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