Component information
TTC004B,Q
TTC004B,Q component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 140 @ 100mA, 5V
- Mfr
- Toshiba Semiconductor and Storage
- Power - Max
- 10 W
- Packaging
- Bulk
- Frequency - Transition
- 100MHz
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 1.5 A
- Package / Case
- TO-225AA, TO-126-3
- Voltage - Collector Emitter Breakdown (Max)
- 160 V
- Supplier Device Package
- TO-126N
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Base Product Number
- TTC004
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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